{"product_id":"wsd20l70dn-20v-70a-pchannel-mosfet","title":"WSD20L70DN 20V 70A P-Channel MOSFET for Synchronous Buck Converters","description":"\u003ch2\u003eWSD20L70DN P-Channel MOSFET | 20V \/ 70A High-Density Trench Replacement for Synchronous Buck Converters\u003c\/h2\u003e\n\u003cp\u003eThe \u003cstrong\u003eWSD20L70DN\u003c\/strong\u003e is a \u003cstrong\u003e20V \/ 70A P-channel power MOSFET\u003c\/strong\u003e in a compact \u003cstrong\u003eDFN3×3-8 package\u003c\/strong\u003e, built with \u003cstrong\u003ehigh cell density trench technology\u003c\/strong\u003e for low RDS(on) and gate charge. Used as the high-side switch in \u003cstrong\u003esynchronous buck converters\u003c\/strong\u003e on hashboard \/ control-board power conversion stages where switching frequency and conduction losses both drive efficiency.\u003c\/p\u003e\n\u003cp\u003eHeadline numbers for synchronous buck duty: \u003cstrong\u003e7.9mΩ maximum RDS(on)\u003c\/strong\u003e, \u003cstrong\u003e70nC total gate charge\u003c\/strong\u003e, \u003cstrong\u003e927pF drain-source capacitance\u003c\/strong\u003e, \u003cstrong\u003e52ns rise time\u003c\/strong\u003e, and excellent \u003cstrong\u003eCdV\/dt attenuation\u003c\/strong\u003e for stable operation under fast-switching transients. Max junction temperature \u003cstrong\u003e150°C\u003c\/strong\u003e with \u003cstrong\u003e83W power dissipation\u003c\/strong\u003e envelope — covers the realistic operating window for ASIC miner buck converters.\u003c\/p\u003e\n\u003ch3\u003eWhen to Replace the WSD20L70DN\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eSynchronous buck output dead\u003c\/strong\u003e — high-side MOSFET shorted or open after a fault event.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eExcessive heat on the MOSFET\u003c\/strong\u003e at normal load — RDS(on) drifted, conduction losses climbing.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eVisible damage on the DFN package\u003c\/strong\u003e — cracking, blackening after a downstream short event.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eBuck output ripple climbing\u003c\/strong\u003e — degraded MOSFET switching characteristics, switching losses up.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eAdjacent gate driver also failed\u003c\/strong\u003e — voltage spike from a shorted MOSFET often kills the driver in the same event.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch4\u003eWSD20L70DN Specifications\u003c\/h4\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eSpecification\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003ePart Number\u003c\/td\u003e\n\u003ctd\u003eWSD20L70DN\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTransistor Type\u003c\/td\u003e\n\u003ctd\u003eMOSFET\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eChannel\u003c\/td\u003e\n\u003ctd\u003eP-Channel\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Drain-Source Voltage (VDS)\u003c\/td\u003e\n\u003ctd\u003e20V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum Drain Current (ID)\u003c\/td\u003e\n\u003ctd\u003e70A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMaximum RDS(on)\u003c\/td\u003e\n\u003ctd\u003e7.9mΩ (0.0079Ω)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTotal Gate Charge (Qg)\u003c\/td\u003e\n\u003ctd\u003e70nC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDrain-Source Capacitance (Cd)\u003c\/td\u003e\n\u003ctd\u003e927pF\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eRise Time (tr)\u003c\/td\u003e\n\u003ctd\u003e52ns\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMax Power Dissipation (Pd)\u003c\/td\u003e\n\u003ctd\u003e83W\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eMax Junction Temperature (Tj)\u003c\/td\u003e\n\u003ctd\u003e150°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTrench Technology\u003c\/td\u003e\n\u003ctd\u003eHigh cell density\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePackage\u003c\/td\u003e\n\u003ctd\u003eDFN3×3-8\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTypical Application\u003c\/td\u003e\n\u003ctd\u003eSynchronous buck converter high-side switch\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCondition\u003c\/td\u003e\n\u003ctd\u003eBrand New\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003ch3\u003e\u003c\/h3\u003e\n\u003ch3\u003eFAQ — WSD20L70DN P-MOSFET\u003c\/h3\u003e\n\u003cp\u003e\u003cstrong\u003eQ: How do I confirm the MOSFET is the dead part?\u003c\/strong\u003e\u003cbr\u003eA: Power off. DMM diode-test mode source-to-drain — healthy reads ~0.5–0.7V (body diode), OL the other direction. Shorted reads 0Ω both directions. Open reads OL both directions. With power on, scope the gate and drain waveforms: clean switching = healthy, distorted or shoot-through = degraded.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eQ: Replace in pairs on a synchronous buck bridge?\u003c\/strong\u003e\u003cbr\u003eA: Yes — when the buck uses a synchronous topology with high-side + low-side MOSFETs, replace in matched pairs to keep RDS(on) and Qg balanced. A single new MOSFET paired with an aged partner mismatches switching characteristics and stresses both devices unevenly.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eQ: Always check the gate driver when this MOSFET fails?\u003c\/strong\u003e\u003cbr\u003eA: Strongly recommended. Voltage spikes from a shorting MOSFET often take out the driver in the same event. Skipping the driver inspection is the most common cause of repeat failure within hours of the repair.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eQ: DFN3×3-8 rework profile?\u003c\/strong\u003e\u003cbr\u003eA: DFN packages have a center thermal pad that must reflow correctly. Bottom-side preheat 130–150°C, top-side hot air 320°C with flux paste. After reflow, X-ray inspection or AOI is the only reliable way to confirm the center pad joined. Hand-soldering is not suitable for DFN packages.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eQ: Bulk pricing for repair benches?\u003c\/strong\u003e\u003cbr\u003eA: Yes — email contact@lys-sz.com for reel-quantity WSD20L70DN pricing and matched gate-driver kits.\u003c\/p\u003e\n\u003ch3\u003eRelated products\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\u003ca href=\"\/products\/sct51240twbr-wide-supply-gate-driver-iceriver-psu-repair\"\u003eSCT51240TWBR 24V 4A Gate Driver (Iceriver PSU)\u003c\/a\u003e\u003c\/li\u003e\n\u003cli\u003e\u003ca href=\"\/products\/2n7002-2n70027f-mosfet-60v-115ma-replacement-chip-antminer-hashboard\"\u003e2N7002 60V\/115mA N-MOSFET (Antminer hashboard)\u003c\/a\u003e\u003c\/li\u003e\n\u003cli\u003e\u003ca href=\"\/products\/dmp34m4sps-tpca8128-mosfet-pchannel-30v-34a-hashboard-replacement-ic-antminer-s11-s15-t15-repair\"\u003eDMP34M4SPS 30V\/34A P-MOSFET (Antminer S11 \/ S15 \/ T15)\u003c\/a\u003e\u003c\/li\u003e\n\u003cli\u003e\u003ca href=\"\/products\/ao3423-asfa-asta-p-channel-mosfet-whatsminer-cb2-v8\"\u003eAO3423 ASFA P-MOSFET 20V\/2A (Whatsminer CB2 V8)\u003c\/a\u003e\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eRepair benches stocking WSD20L70DN P-MOSFETs by the reel? Email \u003ca href=\"mailto:contact@lys-sz.com\"\u003econtact@lys-sz.com\u003c\/a\u003e for bulk pricing. Worldwide shipping from our Shenzhen warehouse.\u003c\/p\u003e","brand":"LYS Shenzhen","offers":[{"title":"Default Title","offer_id":42637406273715,"sku":null,"price":0.34,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0627\/6710\/4179\/files\/WSD20L70DN-20V-70A-P-Channel-MOSFET-High-Performance-Synchronous-Buck-Converters.webp?v=1745282338","url":"https:\/\/lys-sz.com\/products\/wsd20l70dn-20v-70a-pchannel-mosfet","provider":"LYS Shenzhen","version":"1.0","type":"link"}