FQP30N06 N-Channel MOSFET 60V 30A 79W Through Hole TO-220-3 for Power Supply
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About the Product
Upgrade Your Power Supply with the High-Performance FQP30N06 N-Channel MOSFET
Enhance the performance of your power supply with the powerful FQP30N06 N-Channel MOSFET. With a drain-to-source voltage of up to 60V and a continuous drain current of 30A, this MOSFET is designed to handle demanding power supply applications.
Optimal Efficiency and Performance with FQP30N06 MOSFET for Power Supplies
The FQP30N06 MOSFET features metal oxide technology and an input capacitance of 945 pF, making it ideal for high-voltage applications. With a maximum Rds On of 40mOhm and a gate charge of 25 nC, it delivers optimal efficiency even under heavy load conditions. The N-channel FET is housed in a TO-220-3 package, enabling easy installation via through-hole technology.
Operating within a temperature range of -55°C to 175°C, the FQP30N06 MOSFET ensures reliable performance even in extreme working conditions. Upgrade your power supply today with this high-performance MOSFET, guaranteeing optimal efficiency and superior performance.
Technical Features:
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Category
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Discrete Semiconductor Products
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Transistors - FETs, MOSFETs - Single
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Package
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Tube
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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60 V
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Current - Continuous Drain (Id) @ 25°C
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30A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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40mOhm @ 15A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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25 nC @ 10 V
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Vgs (Max)
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±25V
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Input Capacitance (Ciss) (Max) @ Vds
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945 pF @ 25 V
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Power Dissipation (Max)
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79W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Through Hole
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Package / Case
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TO-220-3
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Base Product Number
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FQP30
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