ASW65R041E Low Drain-Source On-Resistance N-Channel MOSFET
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Enhance Power Efficiency with the ASW65R041E N-Channel MOSFET
The ASW65R041E is a high-quality N-Channel MOSFET designed to deliver efficient power control and reliable performance. With its low drain-source on-resistance and easy gate switching control, this MOSFET is ideal for a wide range of applications, including soft switching Boost PFC, HB or AHB, LLC bridge, full bridge topologies, and phase-shifting bridge (ZVS) configurations.
Optimized Gate Switching and Versatile Applications for Power Systems
The ASW65R041E operates in enhancement mode, with a threshold voltage (Vth) ranging from 2.8V to 2V. This mode enables ease of use and flexibility in various power system designs.
ASW65R041E Technical Features:
| Feature | Description |
|---|---|
| Low Drain-Source On-Resistance | Ultra-low RDS(ON) for minimized power loss |
| Easy Gate Switching Control | Simplified control of gate switching for precise operation |
| Enhancement Mode | Operates in enhancement mode for versatility in power systems |
ASW65R041E Parameters:
- VDsTjmax (Maximum Drain-Source Voltage at Maximum Junction Temperature): 700V
- RDs(on),max (Maximum Drain-Source On-Resistance): 41mΩ
- Qg,typ (Typical Total Gate Charge): 133.5nC
- ID.pulse (Pulsed Drain Current): 240A
Shipping & Customs
🇺🇸🇪🇺 USA & European Union (DDP):
Orders are delivered DDP (Delivered Duty Paid). All customs duties, import taxes, and fees are included — no additional charges on delivery.
🌍 Rest of world:
Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes. Any such fees are set by your local authorities and are not included in the product price.
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