Enhance Power Efficiency with the ASW65R041E N-Channel MOSFET

The ASW65R041E is a high-quality N-Channel MOSFET designed to deliver efficient power control and reliable performance. With its low drain-source on-resistance and easy gate switching control, this MOSFET is ideal for a wide range of applications, including soft switching Boost PFC, HB or AHB, LLC bridge, full bridge topologies, and phase-shifting bridge (ZVS) configurations.

Featuring a low drain-source on-resistance (RDS(ON)) of 0.034Ω (typical), the ASW65R041E minimizes power loss and ensures efficient power delivery. Its easy gate switching control allows for smooth and precise operation, enhancing overall system performance.

Optimized Gate Switching and Versatile Applications for Power Systems

The ASW65R041E operates in enhancement mode, with a threshold voltage (Vth) ranging from 2.8V to 2V. This mode enables ease of use and flexibility in various power system designs.

With a maximum VDsTj (drain-source voltage at maximum junction temperature) of 700V, the ASW65R041E offers reliable performance even in demanding high-voltage applications. The maximum on-resistance (RDs(on)) of 41mΩ ensures efficient power flow and reduced heat generation.

Technical Features:

Product Parameters:

• VDsTjmax (Maximum Drain-Source Voltage at Maximum Junction Temperature): 700V
• RDs(on),max (Maximum Drain-Source On-Resistance): 41mΩ
• Qg,typ (Typical Total Gate Charge): 133.5nC
• ID.pulse (Pulsed Drain Current): 240A