Higher Efficiency and Power Density with C3D10065A Silicon Carbide Schottky Diode

Introducing the C3D10065A, a 3rd generation 650V 10A silicon carbide Schottky diode. This advanced diode leverages the performance advantages of silicon carbide (SiC) technology to surpass the efficiency standards set by traditional silicon-based solutions. With its superior characteristics, it enables higher frequencies, increased power density, and lower overall system costs in a wide range of applications.

Reliable and Efficient 650V 10A Schottky Diode for Various Applications

The C3D10065A features a low forward voltage (VF) drop and a positive temperature coefficient, ensuring efficient power transfer and minimizing power losses. Its zero reverse recovery current and forward recovery voltage contribute to enhanced switching performance and reduced switching losses. The temperature-independent switching behavior guarantees consistent and reliable operation across various operating conditions.

Applications:

• Industrial switch mode power supplies
• Uninterruptible and auxiliary power supplies
• Power Factor Correction (PFC) and DC-DC stage boost
• Solar inverters

Technical Features: