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JCS12N65FT N-Channel Enhancement Mode Field Effect Transistor TO-220MF

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About the Product

JCS12N65FT N-Channel MOSFET - The Optimal Choice for Efficient Power Switch Management

Introducing the JCS12N65FT N-Channel MOSFET, the perfect solution to enhance the efficiency and performance of your device's power switch management. Manufactured using advanced trench technology, this MOSFET is specifically designed for high-efficiency switch mode power supplies, electronic lamp ballasts based on a half-bridge, LED power supplies, and more.

Advanced Trench Technology for High-Efficiency Power Applications

The JCS12N65FT N-Channel MOSFET is engineered to deliver exceptional performance with its low gate charge, low Crss (typ. 23pF), and fast switching speeds. These features are crucial for minimizing power losses and optimizing power transfer efficiency in various applications. The MOSFET is avalanche tested, ensuring reliable operation even under demanding conditions.

 

JCS12N65FT Features Table:

Feature Specification
Product Category Discrete Semiconductor Products
Transistors FETs - Single
Transistor Type N-Channel
Drain-Source Current (ID) @ 25℃ 12A
Drain-Source Current (ID) @ 100℃ 7.6A
Breakdown Voltage (BVdss) 650V
Drain-Source On-Resistance (Rds(on)) 0.78Ω
Gate Charge (Qg-typ) 39nC
Improved dv/dt Capability Yes
Compliance RoHS
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