Introducing the LSB65R041GF N-Channel power MOSFET - Taking Power to the Next Level!

If you're looking for a power MOSFET that takes power density and efficiency to the next level, you need the LSB65R041GF. This advanced super junction technology MOSFET boasts an incredibly low resistance, coming in at only 0.041Ω. This makes it the perfect choice for applications requiring exceptional power density and efficiency.

The Key Features of the LSB65R041GF N-Channel 650V, 78A, 0.041Ω power MOSFET

With the LSB65R041GF N-Channel power MOSFET, you'll be able to get more performance out of your applications, and achieve excellent results with ease. If you want to take your power handling capabilities to the next level, there's no better choice than the LSB65R041GF!

Product parameters:

• Type Designator: LSB65R041GF
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 500 W
• Maximum Drain-Source Voltage |Vds|: 650 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
• Maximum Drain Current |Id|: 78 A
• Maximum Junction Temperature (Tj): 150 °C
• Total Gate Charge (Qg): 110 nC
• Rise Time (tr): 52 nS
• Drain-Source Capacitance (Cd): 4800 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.041 Ohm
• Package: TO-247