Optimized Super Trench Technology for Unmatched Efficiency: NCEP40T13GU MOSFET Transistor

The NCEP40T13GU N-Channel MOSFET transistor is a high-performance chip specifically designed for the Whatsminer M10 hash board. With its unique and optimized Super Trench technology, this MOSFET delivers the most efficient high-frequency switching performance available in the market.

Perfect for High-Frequency Switching and Synchronous Rectification in Whatsminer M10 Hash Board

The NCEP40T13GU transistor boasts a VDS (Drain-Source Voltage) rating of 40V and an ID (Drain Current) rating of 130A, making it suitable for demanding applications. Its extremely low combination of RDS(ON) (Drain-Source On-Resistance) and Qg (Gate Charge) minimizes both conduction and switching power losses, ensuring optimal efficiency.

Key Features:

• VDS=40V, ID=130A
• RDS(ON)=1.8mΩ (Typical value) @ VGS=10V
• RDS(ON)=2.8mΩ (Typical value) @ VGS=4.5V
• Excellent gate charge x RDS(on)
• Very low RDS(on)
• 150°C operating temperature
• Lead-free lead plating
• 100% UIS (Unclamped Inductive Switching) tested

The NCEP40T13GU MOSFET transistor is perfect for high-frequency switching applications, such as DC/DC converters and synchronous rectification. Its superior gate charge x RDS(on) performance and low RDS(on) ensure efficient power management and reduced power losses.

Designed specifically for the Whatsminer M10 hash board, the NCEP40T13GU transistor meets the rigorous demands of cryptocurrency mining systems. Its high current and voltage ratings, combined with its optimized Super Trench technology, make it an ideal choice for reliable and efficient operation.