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  • NSi6602B Reliable and High-Speed Isolated Dual-Channel Gate Driver IC
  • NSi6602B SOP16 Isolated Dual-Channel Gate Driver IC
  • Drive Power Transistors with Precision and Robustness using NSi6602B Gate Driver IC
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NSi6602B Reliable and High-Speed Isolated Dual-Channel Gate Driver IC

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About the Product

Drive Power Transistors with Precision and Robustness using NSi6602B Gate Driver IC

Introducing the NSi6602B, a family of high-reliability isolated dual-channel gate driver ICs designed to deliver precise and robust performance in driving power transistors. With a capability to switch up to 2MHz, this gate driver IC offers exceptional speed and reliability in a range of applications.

Fast, Reliable, and Versatile: The NSi6602B Isolated Dual-Channel Gate Driver IC

The NSi6602B features a typical common-mode transient immunity (CMTI) of 150kV/us, providing robustness and protection against transient disturbances. It operates with a maximum supply voltage of 25V, while the input accepts supply voltages from 2.7V to 5.5V. Additionally, all supply voltage pins support undervoltage lockout (UVLO) protection for enhanced safety.

 

NSi6602B Technical Features:

Feature Specification
Isolated dual-channel drivers
Input side supply voltage 2.7V to 5.5V
Driver-side supply voltage Up to 25V with UVLO
4A peak source and 6A peak sink outputs
High CMTI ±150kV/us typical
Propagation delay 25ns typical
Maximum delay matching 5ns
Maximum pulse width distortion 6ns
Programmable dead time
Minimum input pulse width 15ns
Working temperature -40℃ to 125℃

 

International Customers Please Note:

This product ships from China. Please be aware that your order may be subject to import taxes, customs duties, and fees levied by the destination country once the shipment arrives. These charges are the customer's responsibility and are not included in the product price or shipping cost. We are unable to predict what these fees may be, as they vary by country.

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