Qorvo UJ3C120150K3S N-Channel MOSFET 1200V 18.4A 166.7W TO-247-3 for Bitmain APW11 Power Supply
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About the Product
Qorvo UJ3C120150K3S N-Channel MOSFET
Enhance your power electronics applications with the Qorvo UJ3C120150K3S N-Channel MOSFET. This discrete semiconductor component is designed for high-voltage and high-power applications. With a drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 18.4A (Tc) at 25°C, this MOSFET delivers reliable and efficient performance.
High-Voltage and High-Power Qorvo UJ3C120150K3S N-Channel MOSFET for APW11 Power Applications
The UJ3C120150K3S features SiCFET (Cascode SiCJFET) technology, offering enhanced power handling capabilities. Its low on-resistance (Rds On) of 180mOhm @ 5A, 12V ensures minimal power loss. The MOSFET has a maximum gate-source voltage (Vgs) of ±25V and a gate threshold voltage (Vgs(th)) of 5.5V @ 10mA.
With a maximum power dissipation of 166.7W (Tc) and an operating temperature range of -55°C to 175°C (TJ), the UJ3C120150K3S is suitable for demanding environments. It is available in a TO-247-3 package, allowing for easy through-hole mounting.
Technical Features:
| Feature | Description |
|---|---|
| FET Type | N-Channel |
| Technology | SiCFET (Cascode SiCJFET) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 18.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 12V |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 15V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 738pF @ 100V |
| Power Dissipation (Max) | 166.7W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Base Product Number | UJ3C120150 |
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