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SI7942DP-T1-GE3 RF Transistor - Dual N-Channel MOSFET

$1.85 USD
$1.85 USD
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About the Product

SI7942DP-T1-GE3 Dual N-Channel MOSFET | 100V 3.8A for RF & High-Frequency Switching

The SI7942DP-T1-GE3 is an original dual N-channel MOSFET designed for RF amplifier circuits, high-speed switching, and power-management designs. The compact surface-mount SO8 package integrates two channels rated at 100V Vdss / 3.8A continuous current (5.9A pulsed), with 49mΩ RDS(on) at Vgs=10V for low conduction losses. A logic-level gate threshold (Vgs(th) 2-4V) makes it compatible with low-voltage control circuits.

This part is the workhorse choice when a design needs two clean, well-matched N-channel switches in a single footprint — synchronous half-bridges, push-pull stages, motor drivers, and RF power-management blocks. Operating from -55°C to +150°C, it is suitable for industrial, automotive-adjacent, and consumer-electronics duty.

High-Speed SI7942DP-T1-GE3 MOSFET — Low RDS(on) & Logic-Level Gate

  • High-frequency performance — optimised for RF circuits and switching applications up to 100V/3.8A.
  • Low power loss — 49mΩ RDS(on) reduces heat generation and improves energy efficiency.
  • Logic-level gate — compatible with low-voltage control circuits (Vgs(th) 2V-4V).
  • Robust design — operates from -55°C to +150°C for reliability across environments.
  • Surface-mount SO8 package — easy automated PCB assembly in compact layouts.

Typical Use Cases for the SI7942DP

The dual-channel SO8 form factor is a common choice for synchronous DC-DC converters and half-bridge drivers, where matched MOSFETs in a tight thermal footprint produce clean switching waveforms at high frequencies. The SI7942DP also fits cleanly into RF power-management blocks and audio-class amplifier output stages where low Qg (24nC) keeps drive losses manageable. Its 1.4W power dissipation envelope sets the operating ceiling on continuous-duty designs.

SI7942DP-T1-GE3 MOSFET Specifications

Feature Specification
Model SI7942DP-T1-GE3
Type Dual N-Channel MOSFET
Voltage (Vdss) 100V
Current (Id) 3.8A (5.9A pulsed)
RDS(on) 49mΩ @ 10V
Gate Charge (Qg) 24nC
Gate Threshold (Vgs(th)) 2V-4V
Power Dissipation 1.4W
Mounting Type Surface Mount (SO8)
Operating Temperature -55°C to +150°C

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Need SI7942DP in tray quantities for production runs? Email contact@lys-sz.com for bulk pricing and lead times. Worldwide shipping from our Shenzhen warehouse.

Shipping & Customs

🇺🇸🇪🇺 USA & European Union (DDP):
Orders are delivered DDP (Delivered Duty Paid). All customs duties, import taxes, and fees are included — no additional charges on delivery.

🌍 Rest of world:
Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes. Any such fees are set by your local authorities and are not included in the product price.

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