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  • High-Speed SI7942DP-T1-GE3 MOSFET
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SI7942DP-T1-GE3 RF Transistor - Dual N-Channel MOSFET 100V 3.8A for High-Frequency Circuits

$1.85 USD
$1.85 USD
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About the Product

Premium Dual N-Channel MOSFET for RF & Switching Applications

Upgrade your electronic circuits with the original SI7942DP-T1-GE3 RF Transistor, a high-performance dual N-Channel MOSFET designed for RF applications, amplifier circuits, and high-speed switching. This surface-mount MOSFET delivers exceptional efficiency with its low on-resistance (49mΩ) and fast switching speeds, making it ideal for power-sensitive applications where performance matters.

 

High-Speed SI7942DP-T1-GE3 MOSFET - Low RDS(on) & Logic-Level Gate

✔ High-Frequency Performance – Optimized for RF circuits and switching applications up to 100V/3.8A
✔ Low Power Loss – 49mΩ RDS(on) reduces heat generation and improves energy efficiency
✔ Logic-Level Gate – Compatible with low-voltage control circuits (Vgs(th) = 2V-4V)
✔ Robust Design – Operates in -55°C to +150°C environments, ensuring reliability
✔ Surface-Mount (SO8 Package) – Easy automated PCB assembly and compact design

Ideal for RF amplifiers, power management circuits, and high-efficiency switching systems, the SI7942DP-T1-GE3 ensures minimal signal loss and maximum performance.

SI7942DP-T1-GE3 MOSFET Specifications Table:

Feature Specification
Model SI7942DP-T1-GE3
Type Dual N-Channel MOSFET
Voltage (Vdss) 100V
Current (Id) 3.8A (5.9A pulsed)
RDS(on) 49mΩ @ 10V
Gate Charge (Qg) 24nC
Gate Threshold (Vgs(th)) 2V-4V
Power Dissipation 1.4W
Mounting Type Surface Mount (SO8)
Operating Temp. -55°C to +150°C
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International (outside the US):
Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes. Any such fees are set by your local authorities and are not included in the product price.

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