SIRA00DP-T1-GE3 30V 100A (D-S) N-channel synchronous rectification MOSFET

SIRA00DP-T1-GE3 N-Channel MOSFET – 30V 100A High Efficiency Power Solution

The SIRA00DP-T1-GE3 is a high-performance N-channel MOSFET designed for synchronous rectification, DC/DC converters, and ORing applications. It delivers exceptional efficiency and power density in demanding electronic systems.

With a 30V drain-to-source voltage and up to 100A continuous drain current, this MOSFET is ideal for high-current applications such as VRMs, power supplies, and embedded DC/DC modules.

Its ultra-low Rds(on) significantly reduces conduction losses, improving thermal performance and overall system efficiency.

Key Features

• N-channel MOSFET with advanced TrenchFET® technology
• Drain-to-source voltage (Vds): 30V
• Continuous drain current: up to 100A
• Ultra-low Rds(on): 1mΩ @ 10V
• Optimized for synchronous rectification and DC/DC conversion
• High efficiency and reduced power losses
• Low gate charge for improved switching performance
• Compact PowerPAK® SO-8 surface-mount package

Technical Specifications

Applications

Ideal for DC/DC converters, voltage regulator modules (VRM), power supplies, ORing circuits, and high-efficiency power management systems in industrial and mining hardware.