WSD20L70DN P-Channel MOSFET - Advanced Trench Technology for Efficient Power Conversion
The WSD20L70DN P-Channel MOSFET is a cutting-edge solution designed specifically for synchronous buck converter applications. With its advanced high cell density trench technology, this MOSFET delivers outstanding performance in terms of RDSON (Drain-Source On-State Resistance) and gate charge characteristics, ensuring highly efficient power conversion.
High-Performance P-Channel MOSFET for Synchronous Buck Converters
Featuring an ultra-low gate charge and advanced trench technology, the WSD20L70DN MOSFET minimizes power losses and maximizes power conversion efficiency. It also offers excellent CdV/dt attenuation, providing stable and reliable operation even in demanding environments.
Superior Performance and Reliability for High-Frequency Point-of-Load Synchronization
With a maximum drain current of 70A and a low on-state resistance of 0.0079 Ohm, the WSD20L70DN is perfectly suited for high-power applications. Its robust design allows it to operate within a wide temperature range, with a maximum junction temperature of 150°C, ensuring reliable performance under various conditions.
WSD20L70DN Technical Parameters:
Technical Features
Type Designator
WSD20L70DN
Transistor Type
MOSFET
Control Channel
P-Channel
Maximum Power Dissipation (Pd)
83W
Maximum Drain-Source Voltage
Vds
Maximum Gate-Source Voltage
Vgs
Maximum Gate-Threshold Voltage
Vgs(th)
Maximum Drain Current
Id
Maximum Junction Temperature (Tj)
150°C
Total Gate Charge (Qg)
70nC
Rise Time (tr)
52nS
Drain-Source Capacitance (Cd)
927pF
Maximum Drain-Source On-State Resistance (Rds)
0.0079 Ohm
Package
DFN3X3-8
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