TC58NVG0S3ETAI0 1Gbit NAND E2PROM High-Density Non-Volatile Memory Solution
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About the Product
Enhance Data Storage with TC58NVG0S3ETAI0 1Gbit NAND E2PROM
Upgrade your data storage capabilities with the TC58NVG0S3ETAI0 1Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). This digital integrated circuit provides a high-density non-volatile memory solution, offering reliable and efficient data storage for various applications.
High-Density Non-Volatile Memory Solution: TC58NVG0S3ETAI0 1Gbit NAND E2PROM
The TC58NVG0S3ETAI0 features a single 3.3V power supply (Vcc = 2.7V to 3.6V) and a capacity of 1 Gbit (1,107,296,256 bits). Its versatile functionality supports modes such as Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, and Multi Page Read.
With its serial input/output and command control, the TC58NVG0S3ETAI0 provides easy integration and efficient operation. The device offers a minimum of 1004 blocks and a maximum of 1024 blocks, ensuring ample storage capacity.
The TC58NVG0S3ETAI0 is designed for applications requiring high-density non-volatile memory data storage. It is suitable for solid-state file storage, voice recording, image file memory for still cameras, and other systems that demand reliable and efficient data storage.
Technical Features:
| Feature | Description |
|---|---|
| Modes | Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read |
| Serial input/output | Yes |
| Command control | Yes |
| Number of valid blocks | Min 1004 blocks, Max 1024 blocks |
| Power supply | Vcc = 2.7V to 3.6V |
| Auto Page Program | 300 μs/page (typical) |
| Auto Block Erase | 2.5 ms/block (typical) |
| Package | TSOP I 48-P-1220-0.50 |
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