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  • ASW65R041E Low Drain-Source On-Resistance N-Channel MOSFET
  • Enhance Power Efficiency with the ASW65R041E N-Channel MOSFET
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ASW65R041E Low Drain-Source On-Resistance N-Channel MOSFET

$4.90 USD
$4.90 USD
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About the Product

Enhance Power Efficiency with the ASW65R041E N-Channel MOSFET

The ASW65R041E is a high-quality N-Channel MOSFET designed to deliver efficient power control and reliable performance. With its low drain-source on-resistance and easy gate switching control, this MOSFET is ideal for a wide range of applications, including soft switching Boost PFC, HB or AHB, LLC bridge, full bridge topologies, and phase-shifting bridge (ZVS) configurations.

Optimized Gate Switching and Versatile Applications for Power Systems

The ASW65R041E operates in enhancement mode, with a threshold voltage (Vth) ranging from 2.8V to 2V. This mode enables ease of use and flexibility in various power system designs.


ASW65R041E Technical Features:

Feature Description
Low Drain-Source On-Resistance Ultra-low RDS(ON) for minimized power loss
Easy Gate Switching Control Simplified control of gate switching for precise operation
Enhancement Mode Operates in enhancement mode for versatility in power systems

 

ASW65R041E Parameters:
  • VDsTjmax (Maximum Drain-Source Voltage at Maximum Junction Temperature): 700V
  • RDs(on),max (Maximum Drain-Source On-Resistance): 41mΩ
  • Qg,typ (Typical Total Gate Charge): 133.5nC
  • ID.pulse (Pulsed Drain Current): 240A
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