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Antminer S9 BSC0901NS OptiMOS 30V Power Management MOSFET - Efficient and Reliable Power Control

Name: Antminer S9 BSC0901NS OptiMOS 30V Power Management MOSFET - Efficient and Reliable Power Control
Brand: LYS Shenzhen
Price: 24.0 THB
Availability: InStock

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About the Product

Optimize Power Management with BSC0901NS OptiMOS MOSFET

Upgrade your power management system with the Antminer S9 BSC0901NS OptiMOS 30V Power Management MOSFET. Designed for effective power control, these MOSFETs offer ultra-low gate and output charge, as well as the lowest on-state resistance in small packages. With special EMI behavior to reduce interference, these MOSFETs are ideal for a wide range of applications, including Antminer cryptominers hash boards, onboard chargers, computer mainboards, DC-DC conversion, VRD/VRM, motor control, and LED applications.

High-Performance Power MOSFET for Antminer S9 and More

The BSC0901NS OptiMOS MOSFETs are N-channel FETs with a drain-to-source voltage (Vdss) of 30V, making them suitable for various power management requirements. With a continuous drain current (Id) of 28A (Ta) and 100A (Tc), these MOSFETs provide reliable performance under demanding conditions.

BSC0901NS Technical Features:

Category	Discrete Semiconductor Products
Category	Transistors - FETs, MOSFETs - Single
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	28A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Base Product Number	BSC0901

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