Enhance Performance and Reliability with the FHP120N08D N-Channel MOSFET

Introducing the FHP120N08D, an N-channel enhancement mode field-effect transistor (MOSFET) renowned for its reliability and performance. This MOSFET, packaged in TO-220 technology, is commonly used to replace faulty components, ensuring seamless operation in various applications.

High Power Dissipation and Low On-State Resistance for Faulty Component Replacement

The FHP120N08D offers impressive specifications to enhance performance and reliability. With a maximum power dissipation (Pd) of 230 W, it can handle high-power applications with ease. The maximum drain-source voltage (|Vds|) of 80 V and gate-source voltage (|Vgs|) of 25 V provide ample headroom for voltage requirements.

Designed for enhanced control, the FHP120N08D has a gate-threshold voltage (|Vgs(th)|) of 4 V, allowing for precise gate control and optimization. With a maximum drain current (|Id|) of 120 A, it can handle significant current loads without compromising performance.

The FHP120N08D features a TO-220 package, known for its robustness and thermal efficiency. This package ensures easy installation and reliable operation in various environments.

Technical Features:

• Maximum Power Dissipation (Pd): 230 W
• Maximum Drain-Source Voltage (|Vds|): 80 V
• Maximum Gate-Source Voltage (|Vgs|): 25 V
• Maximum Gate-Threshold Voltage (|Vgs(th)|): 4 V
• Maximum Drain Current (|Id|): 120 A
• Total Gate Charge (Qg): 60 nC
• Rise Time (tr): 40 nS
• Drain-Source Capacitance (Cd): 500 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
• Package: TO-220

The FHP120N08D is suitable for a wide range of applications that require reliable power switching and control. It can be used in power supplies, motor control circuits, inverters, and other high-power applications where efficiency and robustness are crucial.