G1N65R035TB-N Hybrid Normally-Off GaN FET - Best-in-Class Performance and Reliability

The G1N65R035TB-N is a cutting-edge hybrid normally-off Gallium Nitride (GaN) FET that offers the strongest gate and lowest reverse voltage drop of any wide bandgap device. With a high threshold, no negative gate drive required, and a high repetitive input voltage tolerance of ±20V, this device allows for simple gate drives and provides best-in-class performance and excellent reliability. Fast turn-on/turn-off speed reduces crossover loss, while low QG and simple gate drive minimize driver consumption at high frequencies.

Key Features, Benefits, and Applications

The G1N65R035TB-N also features the lowest off-state reverse conduction VF of all SiC and GaN FETs, enabling low losses during dead time, as well as low QRR for excellent hard-switching bridge applications. Its high spike tolerance of 800V improves reliability, making it an ideal choice for high-efficiency, high-frequency phase shift, LLC, or other switching topologies.

Key Features:

• Strong Gate with High Threshold, No Negative Gate Drive Required, and High Repetitive Input Voltage Tolerance of ±20V
• Fast Turn-On/Turn-Off Speed to Reduce Crossover Loss
• Low QG and Simple Gate Drive for Lowest Driver Consumption at High Frequencies
• Lowest Off-State Reverse Conduction VF of All SiC and GaN FETs, Enabling Low Losses During Dead Time
• Low QRR for Excellent Hard-Switching Bridge Applications
• High Spike Tolerance of 800V Improves Reliability

Benefits:

• Achieve the Highest Conversion Efficiency
• Enables Higher Frequencies for Compact Power Supplies
• End Product Cost and Size Savings Due to Reduced Thermal Budget
• Improved Safety and Reliability Due to Cooler Operating Temperature

Applications:

• Half-Bridge Buck/Boost, Totem Pole PFC Circuit, or Inverter Circuit
• High-Efficiency/High-Frequency Phase Shift, LLC, or Other Switching Topologies