IRS2109 High-Speed Power MOSFET & IGBT Driver IC

IRS2109 High-Voltage High-Speed MOSFET & IGBT Driver IC

The IRS2109 is a high-voltage, high-speed power MOSFET and IGBT driver IC featuring independent high-side and low-side output channels. Designed with proprietary HVIC and latch-immune CMOS technology, the IRS2109 offers rugged monolithic construction suitable for demanding power electronics applications.

The floating high-side channel supports N-channel MOSFETs or IGBTs in high-side configurations with operating voltages up to 600V. With built-in cross-conduction prevention, matched propagation delays, and wide logic compatibility, the IRS2109 is widely utilized in motor control, SMPS, and inverter designs.

Key Features & Advantages

• High-side floating channel for bootstrap operation
• Fully operational at up to +600V high-side
• Latch-immune CMOS & HVIC technology
• Cross-conduction prevention logic
• 3.3V / 5V / 15V logic compatible inputs
• Matched propagation delays for both channels
• Undervoltage lockout on both channels
• Noise immunity with reduced di/dt gate driver
• Floating channel supports negative transient voltages

Technical Specifications

Typical Applications

• Power MOSFET and IGBT gate driving
• Switching power supply (SMPS)
• Motor control systems
• High-voltage inverter stages
• Uninterruptible power supplies (UPS)
• DC-AC / AC-DC converter systems