HTS

8541.29.00.95

Product Category

Power MOSFET

Configuration

Single

Process Technology

TMOS

Channel Mode

Enhancement

Channel Type

P

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±25

Maximum Gate Threshold Voltage (V)

3

Maximum Continuous Drain Current (A)

67

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

7.5@20V

Typical Gate Charge @ Vgs (nC)

38.4@10V

Typical Gate Charge @ 10V (nC)

38.4

Typical Input Capacitance @ Vds (pF)

1788@15V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

53.2

Typical Rise Time (ns)

13

Typical Turn-Off Delay Time (ns)

61.6

Typical Turn-On Delay Time (ns)

15.3

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Packaging

Tape and Reel

Pin Count

8

Standard Package Name

DFN

Mounting

Surface Mount

Package Height

1.1(Max)

Package Length

5.1(Max)

Package Width

6.1(Max)

PCB changed

8

Lead Shape

No Lead