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Qorvo UJ3C120150K3S N-Channel MOSFET 1200V 18.4A 166.7W TO-247-3 for Bitmain APW11 Power Supply

$9.60 USD
$9.60 USD
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About the Product

Qorvo UJ3C120150K3S N-Channel MOSFET

Enhance your power electronics applications with the Qorvo UJ3C120150K3S N-Channel MOSFET. This discrete semiconductor component is designed for high-voltage and high-power applications. With a drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 18.4A (Tc) at 25°C, this MOSFET delivers reliable and efficient performance.

High-Voltage and High-Power Qorvo UJ3C120150K3S N-Channel MOSFET for APW11 Power Applications

The UJ3C120150K3S features SiCFET (Cascode SiCJFET) technology, offering enhanced power handling capabilities. Its low on-resistance (Rds On) of 180mOhm @ 5A, 12V ensures minimal power loss. The MOSFET has a maximum gate-source voltage (Vgs) of ±25V and a gate threshold voltage (Vgs(th)) of 5.5V @ 10mA.

 

UJ3C120150K3S N-Channel MOSFET Features:

Feature Description
FET Type N-Channel
Technology SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 180mOhm @ 5A, 12V
Vgs(th) (Max) @ Id 5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 15V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 738pF @ 100V
Power Dissipation (Max) 166.7W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Base Product Number UJ3C120150


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This product ships from China. Please be aware that your order may be subject to import taxes, customs duties, and fees levied by the destination country once the shipment arrives. These charges are the customer's responsibility and are not included in the product price or shipping cost. We are unable to predict what these fees may be, as they vary by country.

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