SIRA00DP-T1-GE3 30V 100A (D-S) N-channel synchronous rectification MOSFET
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About the Product
SIRA00DP-T1-GE3 MOSFET – Boost Your DC/DC and ORing Applications
High-Performance N-Channel Synchronous Rectification MOSFET with 100A Continuous Drain Current
Looking for a reliable MOSFET? Look no further than the powerful SIRA00DP-T1-GE3 N-channel synchronous rectification MOSFET. Designed for both DC/DC and ORing applications, this MOSFET boasts a Vds of 30V and continuous drain current of 100 A, making it perfect for high power density DC/DC, VRM, and embedded DC/DC needs. Its resistance between drain and source is only 830 uOhms, meaning you'll experience lightning-fast charging speeds.
With a working temperature range from -55℃ to +150℃, this MOSFET is built to last. Ready to take your project to the next level? Add the SIRA00DP-T1-GE3 MOSFET to your toolkit today.
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Category |
Discrete Semiconductor Products |
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Transistors |
|
|
FETs, MOSFETs |
|
|
Single FETs, MOSFETs |
|
|
Mfr |
Vishay Siliconix |
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Series |
TrenchFET® |
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FET Type |
N-Channel |
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Technology |
MOSFET (Metal Oxide) |
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Drain to Source Voltage (Vdss) |
30 V |
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Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
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Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
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Rds On (Max) @ Id, Vgs |
1mOhm @ 20A, 10V |
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Vgs(th) (Max) @ Id |
2.2V @ 250µA |
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Gate Charge (Qg) (Max) @ Vgs |
220 nC @ 10 V |
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Vgs (Max) |
+20V, -16V |
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Input Capacitance (Ciss) (Max) @ Vds |
11700 pF @ 15 V |
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Power Dissipation (Max) |
6.25W (Ta), 104W (Tc) |
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Operating Temperature |
-55°C ~ 150°C (TJ) |
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Mounting Type |
Surface Mount |
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Package / Case |
PowerPAK® SO-8 |
|
Base Product Number |
SIRA00 |
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