Experience High Power Density and Efficient Power Management with the SRT045N012H Power MOSFET

The SRT045N012H Low-Voltage Power MOSFET in a PDFN5*6 package is a top-of-the-line component designed to meet the demands of applications requiring excellent power density and synchronous rectification. With its low on-resistance, low gate charge, and fast switching times, the SRT045N012H delivers outstanding performance and efficiency.

Featuring an ultra-low RDS(ON)_TYP of 1.07mΩ at VGS = 10V, this MOSFET minimizes power loss and ensures efficient power delivery. Its ultra-low gate charge, with a typical value of 73nC, enables fast and responsive switching, contributing to optimized power management.

Robust Design and Fast Switching for Diverse Applications

The SRT045N012H is built with a robust design, offering enhanced EAS performance and robustness. It exhibits highly robust avalanche characteristics with a breakdown voltage of 45V, ensuring stable operation even under demanding conditions. Additionally, it improves electromagnetic interference (EMI) performance, contributing to cleaner and more reliable operation in sensitive electronic systems.

This low-voltage power MOSFET finds versatile application in various fields, including server/telecom, DC/DC converters, high-power supplies, and battery management systems. Its high performance, fast switching capability, and robust design make it an ideal choice for demanding applications where efficiency and reliability are paramount.

Technical Features:

Applications:

• Server/Telecom
• DC/DC converters
• High-power supplies
• Battery management systems