SSW47N60S High-Performance 600V N-Channel MOSFET Crypto Mining Repair
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About the Product
Efficient Power Conversion with SSW47N60S 600V N-Channel MOSFET
Introducing the SSW47N60S, a high-performance 600V N-channel MOSFET that belongs to a new generation of advanced high-voltage MOSFET series. This MOSFET utilizes an innovative charge balancing mechanism to deliver exceptional low on-resistance and low gate charge performance, resulting in minimized conduction losses and excellent switching characteristics.
Low On-Resistance and Excellent Switching Performance: SSW47N60S MOSFET
The SSW47N60S MOSFET offers a maximum power consumption (Pd) of 391W, providing high power handling capabilities. It has a maximum drain-source voltage (|Vds|) of 600V, ensuring robustness in high-voltage applications. The maximum gate-source voltage (|Vgs|) is 30V, and the maximum gate threshold voltage (|Vgs(th)|) is 4.5V, enabling precise control and operation.
SSW47N60S MOSFET Technical Features:
| Feature | Specification |
|---|---|
| Transistor type | MOSFET |
| Control channel type | N channel |
| Maximum Power Consumption (Pd) | 391 W |
| Maximum Drain-Source Voltage ( | Vds |
| Maximum Gate-Source Voltage ( | Vgs |
| Maximum Gate Threshold Voltage ( | Vgs(th) |
| Maximum Drain Current ( | Id |
| Maximum Junction Temperature (Tj) | 150°C |
| Total Gate Charge (Qg) | 64 nC |
| Rise Time (tr) | 12 ns |
| Drain-Source Capacitance (Cd) | 910 pF |
| Maximum Drain-Source On-Resistance (Rds) | 0.07 ohms |
| Package | TO247 |
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