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  • SSW47N60S, a high-performance 600V N-channel MOSFET
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SSW47N60S High-Performance 600V N-Channel MOSFET Crypto Mining Repair

$4.80 USD
$4.80 USD
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About the Product

Efficient Power Conversion with SSW47N60S 600V N-Channel MOSFET

Introducing the SSW47N60S, a high-performance 600V N-channel MOSFET that belongs to a new generation of advanced high-voltage MOSFET series. This MOSFET utilizes an innovative charge balancing mechanism to deliver exceptional low on-resistance and low gate charge performance, resulting in minimized conduction losses and excellent switching characteristics.

Low On-Resistance and Excellent Switching Performance: SSW47N60S MOSFET

The SSW47N60S MOSFET offers a maximum power consumption (Pd) of 391W, providing high power handling capabilities. It has a maximum drain-source voltage (|Vds|) of 600V, ensuring robustness in high-voltage applications. The maximum gate-source voltage (|Vgs|) is 30V, and the maximum gate threshold voltage (|Vgs(th)|) is 4.5V, enabling precise control and operation.


SSW47N60S MOSFET Technical Features:

Feature Specification
Transistor type MOSFET
Control channel type N channel
Maximum Power Consumption (Pd) 391 W
Maximum Drain-Source Voltage ( Vds
Maximum Gate-Source Voltage ( Vgs
Maximum Gate Threshold Voltage ( Vgs(th)
Maximum Drain Current ( Id
Maximum Junction Temperature (Tj) 150°C
Total Gate Charge (Qg) 64 nC
Rise Time (tr) 12 ns
Drain-Source Capacitance (Cd) 910 pF
Maximum Drain-Source On-Resistance (Rds) 0.07 ohms
Package TO247


International Customers Please Note:

This product ships from China. Please be aware that your order may be subject to import taxes, customs duties, and fees levied by the destination country once the shipment arrives. These charges are the customer's responsibility and are not included in the product price or shipping cost. We are unable to predict what these fees may be, as they vary by country.

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