Vishay Siliconix G47N60EF MOSFET N-Channel 600V 47A (Tc) High Power Through Hole TO-247AC
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About the Product
High-Performance N-Channel MOSFET for Power Applications
Upgrade your power control systems with the Vishay Siliconix G47N60EF MOSFET. This high-performance N-Channel MOSFET is designed to meet the demands of industrial applications. With a drain-to-source voltage of 600V and a continuous drain current of 47A (Tc), it provides robust power handling capabilities.
Vishay Siliconix G47N60EF - Efficient Power Control
Featuring advanced MOSFET technology, the G47N60EF ensures efficient power control with low on-resistance (Rds On) of 67mOhm @ 24A, 10V. Its gate charge (Qg) of 225nC @ 10V enables fast switching, optimizing system performance. The MOSFET operates within a wide temperature range of -55°C to 150°C (TJ), making it suitable for challenging environments.
The G47N60EF is packaged in a reliable through-hole TO-247AC package, allowing secure mounting and thermal dissipation. With its high power dissipation of 379W (Tc), it delivers exceptional reliability and performance in power electronics applications.
Technical Features Table:
| Feature | Specification |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 225nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4854pF @ 100V |
| Power Dissipation (Max) | 379W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Base Product Number | SIHG47 |
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