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  • Siliconix G47N60EF MOSFET N-Channel 600V 47A (Tc) High Power Through Hole TO-247AC
  • G47N60EF MOSFET N-Channel 600V 47A (Tc) High Power Through Hole
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Siliconix G47N60EF MOSFET N-Channel 600V 47A (Tc) High Power Through Hole TO-247AC

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About the Product

High-Performance N-Channel MOSFET for Power Applications

Upgrade your power control systems with the Siliconix G47N60EF MOSFET. This high-performance N-Channel MOSFET is designed to meet the demands of industrial applications. With a drain-to-source voltage of 600V and a continuous drain current of 47A (Tc), it provides robust power handling capabilities.

Siliconix G47N60EF - Efficient Power Control

Featuring advanced MOSFET technology, the G47N60EF ensures efficient power control with low on-resistance (Rds On) of 67mOhm @ 24A, 10V. Its gate charge (Qg) of 225nC @ 10V enables fast switching, optimizing system performance. The MOSFET operates within a wide temperature range of -55°C to 150°C (TJ), making it suitable for challenging environments.


G47N60EF MOSFET Technical Features Table:

Feature Specification
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 67mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4854pF @ 100V
Power Dissipation (Max) 379W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Base Product Number SIHG47


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Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes. Any such fees are set by your local authorities and are not included in the product price.

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