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WMJ36N65F2 650V N-Channel SJ-MOSFET TO-247 Package

$1.98 USD
$1.98 USD
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About the Product

WMJ36N65F2 High-Performance 650V N-Channel SJ-MOSFET (TO-247)

Enhance the efficiency and reliability of your high-power electronics with the WMJ36N65F2, a second-generation Super-Junction N-Channel MOSFET designed for fast-switching applications. Its swift body diode delivers improved reverse recovery performance, making it ideal for modern SMPS, PFC, inverter, and industrial control designs.

Fast-Switching SJ-MOSFET for Demanding Power Applications

The WMJ36N65F2 features low RDS(on), high avalanche capability, and robust thermal performance within a TO-247 package. This ensures low conduction loss, lower temperature rise, and long-term stability even under heavy load.

WMJ36N65F2 Product Parameters:

Drain-Source Voltage (VDS) 650V
Max RDS(on) @ VGS=10V 0.105Ω
Continuous Drain Current (ID) 36A @ 25°C
Power Dissipation (PD) 277W @ 25°C
Gate-Source Voltage (VGS) ±30V
Gate Threshold Voltage (VGS(th)) Typ. 4V
Max VDS @ TJ,max 700V
Typical RDS(on) 0.087Ω

WMJ36N65F2 Features:

  • Second-generation Super-Junction MOSFET
  • Fast body diode for high-frequency switching
  • High avalanche ruggedness (100% UIS tested)
  • Low RDS(on) for reduced conduction losses
  • High dv/dt tolerance
  • Pb-free plating & Halogen-free

Common Applications:

  • Server & Industrial SMPS
  • PFC power stages
  • Solar inverters & battery chargers
  • Motor control & industrial drives
  • High-voltage power conversion platforms
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United States (DDP):
Orders shipped to the US are delivered DDP (Delivered Duty Paid). All customs duties, import taxes, and fees are included — no additional charges on delivery.

International (outside the US):
Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes. Any such fees are set by your local authorities and are not included in the product price.

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