WMJ53N65F2 - High-Quality 650V N-Channel Diode Junction MOSFET for Power Electronics

Enhance the performance of your power electronics with the WMJ53N65F2, a high-quality 650V N-channel diode junction MOSFET. This MOSFET delivers fast switching capabilities and reliable performance, making it an excellent choice for demanding power applications. With its TO-247 package, it provides a familiar format that is easy to integrate into existing systems.

Upgrade Your Power Electronics with the WMJ53N65F2 MOSFET

The WMJ53N65F2 boasts impressive specifications, including a VDS (drain-source voltage) of 650V, ensuring robust operation in high-voltage environments. With an RDS(on) (on-resistance) of 0.078Ω @VGS=10V (max.), it minimizes power loss and enhances overall efficiency. The ID (continuous drain current) of 50A @TA=25℃ allows for handling significant power loads, while the PD (power dissipation) of 350W @TA=25℃ ensures efficient heat dissipation.

Fast Switching and Reliable Performance: WMJ53N65F2 650V N-Channel Diode Junction MOSFET

Featuring a VGS (gate-source voltage) of 30V and a VGS(th) (gate-source threshold voltage) of typically 3V, the WMJ53N65F2 provides precise control over the switching operation. It also undergoes 100% UIS (unclamped inductive switching) testing for guaranteed reliability.

With its Pb-free plating and halogen-free composition, the WMJ53N65F2 promotes environmental sustainability while delivering outstanding performance.

Upgrade your power electronics with confidence using the WMJ53N65F2 MOSFET and experience fast switching, reliable performance, and exceptional quality.

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