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WSD20L70DN 20V 70A P-Channel MOSFET High Performance for Synchronous Buck Converters

$0.34 USD
$0.34 USD
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About the Product

WSD20L70DN P-Channel MOSFET - Advanced Trench Technology for Efficient Power Conversion

The WSD20L70DN P-Channel MOSFET is a cutting-edge solution designed specifically for synchronous buck converter applications. With its advanced high cell density trench technology, this MOSFET delivers outstanding performance in terms of RDSON (Drain-Source On-State Resistance) and gate charge characteristics, ensuring highly efficient power conversion.

High-Performance P-Channel MOSFET for Synchronous Buck Converters

Featuring an ultra-low gate charge and advanced trench technology, the WSD20L70DN MOSFET minimizes power losses and maximizes power conversion efficiency. It also offers excellent CdV/dt attenuation, providing stable and reliable operation even in demanding environments.

Superior Performance and Reliability for High-Frequency Point-of-Load Synchronization

With a maximum drain current of 70A and a low on-state resistance of 0.0079 Ohm, the WSD20L70DN is perfectly suited for high-power applications. Its robust design allows it to operate within a wide temperature range, with a maximum junction temperature of 150°C, ensuring reliable performance under various conditions.


 

WSD20L70DN Technical Parameters:
Technical Features
Type Designator WSD20L70DN
Transistor Type MOSFET
Control Channel P-Channel
Maximum Power Dissipation (Pd) 83W
Maximum Drain-Source Voltage Vds
Maximum Gate-Source Voltage Vgs
Maximum Gate-Threshold Voltage Vgs(th)
Maximum Drain Current Id
Maximum Junction Temperature (Tj) 150°C
Total Gate Charge (Qg) 70nC
Rise Time (tr) 52nS
Drain-Source Capacitance (Cd) 927pF
Maximum Drain-Source On-State Resistance (Rds) 0.0079 Ohm
Package DFN3X3-8
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