SRC60R090B Super Junction Power MOSFET for Innosilicon G1240 PSU
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Enhance Power Density and Efficiency with SRC60R090B Super Junction Power MOSFET
The SRC60R090B is a high voltage power MOSFET built using advanced super junction technology, offering exceptional performance for power applications. With an ultra-low on-resistance of 90mΩ at VGS = 10V and an ultra-low gate charge of 90.3nC (typical), this MOSFET delivers superior power density and outstanding efficiency.
High-Performance N-Channel MOSFET for Robust Power Applications and Innosilicon G1240 PSU
Featuring a fast-recovery intrinsic body diode and fast switching capability, the SRC60R090B is designed to handle high voltage applications with ease. Its robust design ensures better EAS (Single Pulse Avalanche Energy) performance, making it a reliable choice for demanding power systems.
SRC60R090B MOSFET Technical Features:
| Feature | Details |
|---|---|
| On-Resistance | 90mΩ @ VGS = 10V |
| Gate Charge | 90.3nC (typical) |
| Body Diode | Intrinsic Fast-Recovery |
| Switching Capability | Fast |
| EAS Performance | Robust design |
| Breakdown Voltage | 600V |
| Package Options | TO-220F, TO-263-2, TO-247 |
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