SIRA00DP-T1-GE3 30V 100A (D-S) N-channel synchronous rectification MOSFET
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SIRA00DP-T1-GE3 N-Channel MOSFET – 30V 100A High Efficiency Power Solution
The SIRA00DP-T1-GE3 is a high-performance N-channel MOSFET designed for synchronous rectification, DC/DC converters, and ORing applications. It delivers exceptional efficiency and power density in demanding electronic systems.
With a 30V drain-to-source voltage and up to 100A continuous drain current, this MOSFET is ideal for high-current applications such as VRMs, power supplies, and embedded DC/DC modules.
Its ultra-low Rds(on) significantly reduces conduction losses, improving thermal performance and overall system efficiency.
Key Features
- N-channel MOSFET with advanced TrenchFET® technology
- Drain-to-source voltage (Vds): 30V
- Continuous drain current: up to 100A
- Ultra-low Rds(on): 1mΩ @ 10V
- Optimized for synchronous rectification and DC/DC conversion
- High efficiency and reduced power losses
- Low gate charge for improved switching performance
- Compact PowerPAK® SO-8 surface-mount package
Technical Specifications
| Part Number | SIRA00DP-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Technology | TrenchFET® MOSFET |
| Channel Type | N-Channel |
| Drain-Source Voltage (Vds) | 30V |
| Continuous Drain Current (Id) | 100A |
| Rds(on) | 1mΩ @ 20A, 10V |
| Gate Charge (Qg) | 220 nC @ 10V |
| Gate Voltage (Max) | +20V / -16V |
| Input Capacitance (Ciss) | 11700 pF @ 15V |
| Power Dissipation | 104W (Tc) |
| Operating Temperature | -55°C to +150°C |
| Package | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Condition | Brand New |
Applications
Ideal for DC/DC converters, voltage regulator modules (VRM), power supplies, ORing circuits, and high-efficiency power management systems in industrial and mining hardware.
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