ASW65R041E Low Drain-Source On-Resistance N-Channel MOSFET - Efficient Power Control and Reliable Performance

Enhance Power Efficiency with the ASW65R041E N-Channel MOSFET

The ASW65R041E is a high-quality N-Channel MOSFET designed to deliver efficient power control and reliable performance. With its low drain-source on-resistance and easy gate switching control, this MOSFET is ideal for a wide range of applications, including soft switching Boost PFC, HB or AHB, LLC bridge, full bridge topologies, and phase-shifting bridge (ZVS) configurations.

Optimized Gate Switching and Versatile Applications for Power Systems

The ASW65R041E operates in enhancement mode, with a threshold voltage (Vth) ranging from 2.8V to 2V. This mode enables ease of use and flexibility in various power system designs.

ASW65R041E Technical Features:

ASW65R041E Parameters:

• VDsTjmax (Maximum Drain-Source Voltage at Maximum Junction Temperature): 700V
• RDs(on),max (Maximum Drain-Source On-Resistance): 41mΩ
• Qg,typ (Typical Total Gate Charge): 133.5nC
• ID.pulse (Pulsed Drain Current): 240A