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About the Product
Enhance Performance with the FDV301N N-Channel Logic Level Enhancement MOSFET
Upgrade the performance of your Whatsminer CB2 V8 control board with the FDV301N N-channel logic level enhancement mode field effect transistor. Manufactured using Fairchild Semiconductor's advanced DMOS technology, this MOSFET is designed to deliver optimal functionality and enhance the overall performance of your control board.
Optimal Functionality for Your Whatsminer CB2 V8 Control Board
The FDV301N MOSFET is specifically crafted to minimize on-resistance, offering an efficient replacement for multiple digital transistors with varying bias resistor values. With a continuous current rating of 0.22A and a peak current of 0.5A, this MOSFET provides reliable and consistent operation.
Featuring low RDS(ON) values of 4Ω and 5Ω at VGS=4.5V and VGS=2.7V respectively, the FDV301N is perfectly suited for use in your Whatsminer CB2 V8 control board. It ensures seamless direct operation in 3V circuits with minimal gate drive requirements.
Additionally, the FDV301N MOSFET incorporates a gate-source Zener for enhanced ESD ruggedness, with a Human Body Model rating of over 6kV. This ensures reliable performance and protection against electrostatic discharges.
Upgrade your control board today and say goodbye to multiple NPN digital transistors. Switch to the FDV301N MOSFET and experience the benefits of a single DMOS FET, enabling optimal functionality and improved performance.
Technical Features Table:
Feature
Specification
Continuous Current
0.22A
Peak Current
0.5A
RDS(ON) at VGS=4.5V
4Ω
RDS(ON) at VGS=2.7V
5Ω
Gate Drive Voltage
Negligible
Gate-Source Zener
Yes (ESD ruggedness with Human Body Model >6kV)
Applications
Whatsminer CB2 V8 control board and other compatible uses
Upgrade your Whatsminer CB2 V8 control board with the FDV301N MOSFET for enhanced performance and optimal functionality. Contact our sales team today to learn more and place your order.
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