Experience Unparalleled Efficiency and Robustness with the IPA60R360P7S

Introducing the IPA60R360P7S, the 7th generation platform of high voltage power MOSFET technology that revolutionizes switching applications. With its exceptional performance and ease of use, this MOSFET is marked as 60S360P7 and offers a range of advantages for various power applications.

This MOSFET combines the best features of fast switching SJ MOSFETs, presenting an incredibly low ringing tendency and outstanding robustness of the body diode for hard commutation. It also boasts excellent ESD capability, ensuring reliable operation even in demanding environments.

Next-Generation High Voltage Power MOSFET for Efficient Switching Applications

One of the standout features of the IPA60R360P7S is its remarkably low switching and conduction losses, resulting in increased efficiency, compactness, and cooler operation in switching applications. It is suitable for both hard and soft switching, including PFC (Power Factor Correction) and LLC (Full-Bridge LLC) topologies.

The IPA60R360P7S simplifies thermal management, thanks to its low switching and conduction losses, enabling designers to optimize cooling solutions effectively. With its high power density and smaller footprint, this MOSFET allows for higher build quality while providing >2kV ESD protection.

Whether it's PFC, PWM (Pulse Width Modulation), or other power applications, the IPA60R360P7S is suitable for a wide range of power ranges, offering unparalleled efficiency, robustness, and ease of use.

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