K31N60W High-Quality N-Channel MOS Replacement MOSFET

Experience Enhanced Performance and Reliability with the K31N60W N-Channel MOS

Introducing the K31N60W, a brand new and original N-Channel MOS component known for its guaranteed quality and exceptional performance. This MOS is widely used as a reliable replacement for faulty components, ensuring uninterrupted functionality in various applications.

Efficient Gate Switching and Low Drain-Source On-Resistance for Voltage Regulator Applications

The K31N60W features a low drain-source on-resistance, with RDs(ON) of 0.073Ω (typ.), made possible by its advanced Super Junction Structure using DTMOS technology. This results in improved efficiency and reduced power dissipation.

K31N60W Technical Features:

• Low drain-source on-resistance (RDs(ON)): 0.073Ω (typ.)
• Super Junction Structure (DTMOS) for improved performance
• Easy-to-control gate switching
• Enhancement mode operation with a threshold voltage (Vth) of 2.7V to 3.7V (VDs=10V, ID=1.5mA)