The MPS10065V1 10A 650V 1.5V SiC diode is the right pick for high-efficiency applications requiring superior performance. With advanced TO-220 package technology and crystallization temperature of 175°C, this silicon carbide (SiC) Schottky diode offers higher efficiency and shorter recovery time than traditional silicon diode alternatives.
Key benefit: improved efficiency across all load conditions. vs silicon diode alternatives, the MPS10065V1 offers increased efficiency and higher safety margins against overvoltage. This reduction in losses means heat sink requirements are minimized — ideal for demanding mining PSU and SMPS applications.
Typical Use in PSU Repair
PSU secondary-side rectification — high-frequency rectification with low Vf.
Boost converter freewheel — fast recovery for high-frequency boost stages.
PFC stage Schottky — power factor correction circuits.
Q: SiC vs silicon — what's the advantage? A: SiC Schottky has near-zero reverse recovery time vs silicon's significant trr. At high switching frequencies (>100kHz), the SiC efficiency gain compounds. Higher cost but better efficiency for high-power high-frequency designs.
Q: 650V vs 600V vs 1200V? A: 650V class fits typical 400V DC bus designs with margin. For 600V designs, 650V provides headroom for transients. For 800V+ DC bus, use 1200V SiC.
PSU repair shops stocking MPS10065V1 by the tube? Email contact@lys-sz.com for bulk pricing. Worldwide shipping from our Shenzhen warehouses.
📦 Shipping & Customs⌄
🇺🇸🇪🇺 USA & European Union (DDP): Orders are delivered DDP. All customs duties, import taxes, and fees are included — no additional charges on delivery.
🌍 Rest of world: Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes.
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