S34ML01G100TFI000 High-Performance NAND Flash Memory for Solid-State Mass Storage
S34ML01G100TFI000 High-Performance NAND Flash Memory for Solid-State Mass Storage
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S34ML01G100TFI000 - Advanced NAND Flash Memory for Solid-State Mass Storage Solutions
Experience exceptional storage performance with the S34ML01G100TFI000 NAND flash memory. Designed for solid-state mass storage applications, this high-performance memory operates on 1.8VCC and VCCQ power supplies and offers both ×8 and ×16 I/O interfaces. Its NAND cells deliver cost-effective solutions, ensuring efficient data storage.
Boost Your Storage Performance with S34ML01G100TFI000 NAND Flash Memory
The S34ML01G100TFI000 memory is organized into blocks that can be independently erased, allowing for the efficient removal of old data while preserving valuable information. With a read cache function, this device enhances the read throughput of large files. During cache reads, data is loaded into cache registers while simultaneously transferring previous data to the I/O buffer for seamless reading.
Technical Features Table:
| Features | Specifications |
|---|---|
| Page Read / Program | Random access: 25 µs (Max) |
| Sequential access: 45 ns (Min) | |
| Program time / Multiplane Program time: 250 µs (Typ) | |
| Block Erase (S34MS01G1) | Block Erase time: 2.0 ms (Typ) |
| Reliability | 100,000 Program / Erase cycles (Typ) (with 1-bit ECC per 528 bytes (×8) or 264 words (×16)) |
| 10-year Data retention (Typ) | |
| For one plane structure (1-Gb density) | |
| Block zero is valid and will be valid for at least 1,000 program erase cycles with ECC | |
| For two plane structures (2-Gb and 4-Gb densities) | |
| Blocks zero and one are valid and will be valid for at least 1,000 program-erase cycles with ECC |
