Upgrade Your Power System with SCS210AM/C SiC Schottky Diode
Enhance your power system with the high-performing SCS210AM/C SiC Schottky Diode. Engineered by Rohm Semiconductor, this semiconductor device utilizes Silicon Carbide Schottky technology, ensuring exceptional efficiency and superior performance.
Efficient Power Conversion with SCS210AM/C - Superior Performance
With a maximum DC reverse voltage of 650V and an average rectified current of 10A, the SCS210AM/C diode is ideal for a wide range of applications, including PFC boost topology, secondary side rectification, data centers, and PV power conditioners.
SCS210AMC Diode Technical Features:
Category
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Not For New Designs
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.55 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
200 µA @ 600 V
Capacitance @ Vr, F
365pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220FM
Operating Temperature - Junction
175°C (Max)
Base Product Number
SCS210
📦 Shipping & Customs⌄
🇺🇸🇪🇺 USA & European Union (DDP): Orders are delivered DDP. All customs duties, import taxes, and fees are included — no additional charges on delivery.
🌍 Rest of world: Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes.
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