SCS210AM SCS210AMC Diode 650V 10A Through Hole TO-220FM
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About the Product
Upgrade Your Power System with SCS210AM/C SiC Schottky Diode
Enhance your power system with the high-performing SCS210AM/C SiC Schottky Diode. Engineered by Rohm Semiconductor, this semiconductor device utilizes Silicon Carbide Schottky technology, ensuring exceptional efficiency and superior performance.
Efficient Power Conversion with SCS210AM/C - Superior Performance
With a maximum DC reverse voltage of 650V and an average rectified current of 10A, the SCS210AM/C diode is ideal for a wide range of applications, including PFC boost topology, secondary side rectification, data centers, and PV power conditioners.
Featuring a remarkable 0ns reverse recovery time and no recovery time above 500mA current, this diode swiftly responds to your power needs. It also boasts a capacitive rating of 365pF at 1V 1MHz, enabling seamless handling of high-frequency loads.
Installing the SCS210AM/C is a breeze, thanks to its through-hole mounting system and TO-220FM package/case. It serves as an excellent alternative to the SCS310AM, providing reliability and high performance.
Technical Features:
|
Category |
Discrete Semiconductor Products |
|
Diodes |
|
|
Rectifiers |
|
|
Single Diodes |
|
|
Mfr |
Rohm Semiconductor |
|
Series |
- |
|
Package |
Tube |
|
Product Status |
Not For New Designs |
|
Technology |
SiC (Silicon Carbide) Schottky |
|
Voltage - DC Reverse (Vr) (Max) |
650 V |
|
Current - Average Rectified (Io) |
10A |
|
Voltage - Forward (Vf) (Max) @ If |
1.55 V @ 10 A |
|
Speed |
No Recovery Time > 500mA (Io) |
|
Reverse Recovery Time (trr) |
0 ns |
|
Current - Reverse Leakage @ Vr |
200 µA @ 600 V |
|
Capacitance @ Vr, F |
365pF @ 1V, 1MHz |
|
Mounting Type |
Through Hole |
|
Package / Case |
TO-220-2 |
|
Supplier Device Package |
TO-220FM |
|
Operating Temperature - Junction |
175°C (Max) |
|
Base Product Number |
SCS210 |
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