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SCS210AM SCS210AMC Diode 650V 10A Through Hole TO-220FM

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About the Product

Upgrade Your Power System with SCS210AM/C SiC Schottky Diode


Enhance your power system with the high-performing SCS210AM/C SiC Schottky Diode. Engineered by Rohm Semiconductor, this semiconductor device utilizes Silicon Carbide Schottky technology, ensuring exceptional efficiency and superior performance.

Efficient Power Conversion with SCS210AM/C - Superior Performance

With a maximum DC reverse voltage of 650V and an average rectified current of 10A, the SCS210AM/C diode is ideal for a wide range of applications, including PFC boost topology, secondary side rectification, data centers, and PV power conditioners.

Featuring a remarkable 0ns reverse recovery time and no recovery time above 500mA current, this diode swiftly responds to your power needs. It also boasts a capacitive rating of 365pF at 1V 1MHz, enabling seamless handling of high-frequency loads.

Installing the SCS210AM/C is a breeze, thanks to its through-hole mounting system and TO-220FM package/case. It serves as an excellent alternative to the SCS310AM, providing reliability and high performance.

 

Technical Features:

Category

Discrete Semiconductor Products

Diodes

Rectifiers

Single Diodes

Mfr

Rohm Semiconductor

Series

-

Package

Tube

Product Status

Not For New Designs

Technology

SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max)

650 V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.55 V @ 10 A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0 ns

Current - Reverse Leakage @ Vr

200 µA @ 600 V

Capacitance @ Vr, F

365pF @ 1V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220FM

Operating Temperature - Junction

175°C (Max)

Base Product Number

SCS210

View Product Details

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