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  • High-Performance SiC Schottky Diode - 650V 10A - Efficient Power Conversion
  • SCS210AM SCS210AMC Diode 650V 10A Through Hole TO-220FM
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SCS210AM SCS210AMC Diode 650V 10A Through Hole TO-220FM

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About the Product

Upgrade Your Power System with SCS210AM/C SiC Schottky Diode

Enhance your power system with the high-performing SCS210AM/C SiC Schottky Diode. Engineered by Rohm Semiconductor, this semiconductor device utilizes Silicon Carbide Schottky technology, ensuring exceptional efficiency and superior performance.

Efficient Power Conversion with SCS210AM/C - Superior Performance

With a maximum DC reverse voltage of 650V and an average rectified current of 10A, the SCS210AM/C diode is ideal for a wide range of applications, including PFC boost topology, secondary side rectification, data centers, and PV power conditioners.

 

SCS210AMC Diode Technical Features:

Category

Discrete Semiconductor Products

Diodes

Rectifiers

Single Diodes

Mfr

Rohm Semiconductor

Series

-

Package

Tube

Product Status

Not For New Designs

Technology

SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max)

650 V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.55 V @ 10 A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0 ns

Current - Reverse Leakage @ Vr

200 µA @ 600 V

Capacitance @ Vr, F

365pF @ 1V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220FM

Operating Temperature - Junction

175°C (Max)

Base Product Number

SCS210

International Customers Please Note:

This product ships from China. Please be aware that your order may be subject to import taxes, customs duties, and fees levied by the destination country once the shipment arrives. These charges are the customer's responsibility and are not included in the product price or shipping cost. We are unable to predict what these fees may be, as they vary by country.

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