Skip to content
Skip to product information
1 of 2

SI4835DY P-Channel MOSFET 30 V 8.8A 1W Surface Mount 8-SOIC

$0.50 USD
$0.50 USD
Sale Sold out
Shipping calculated at checkout.

Additional details

Shipping fees will be automatically calculated during the checkout process.

Reach out to us via the contact form for further information and assistance.

Secure checkout with
  • Visa
  • Mastercard
  • American Express
  • Apple Pay
  • Union Pay
  • Maestro
  • Bitcoin
  • Discover

About the Product

Fairchild Semiconductor SI4835DY P-Channel MOSFET


Enhance the performance of your electronic devices with the Fairchild Semiconductor SI4835DY P-Channel MOSFET. This active MOSFET, featuring PowerTrench technology, is designed to optimize power sourcing in various applications. With a maximum drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 8.8A at 25°C, this MOSFET delivers reliable and efficient power results.

Upgrade Your Power Source with Fairchild Semiconductor SI4835DY P-Channel MOSFET

The SI4835DY MOSFET boasts a low on-resistance (Rds On) of 20mOhm at 8.8A and 10V, ensuring minimal power loss and improved performance. It has a gate charge (Qg) of 27 nC at 10V, enabling fast switching and reducing power dissipation. The maximum gate voltage (Vgs) of ±25V provides flexibility in voltage control.

Efficient PowerTrench Bulk MOSFET for Reliable Performance

With an input capacitance (Ciss) of 1680 pF at 15V, the SI4835DY offers effective power management capabilities. It is packaged in a compact 8-SOIC bulk package, making it suitable for surface mount applications.

Upgrade your power source technology with the Fairchild Semiconductor SI4835DY P-Channel MOSFET and experience enhanced performance and efficiency in your electronic devices.

 

Technical Features:

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Fairchild Semiconductor

Series

PowerTrench®

Package

Bulk

Product Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

8.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 8.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27 nC @ 10 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1680 pF @ 15 V

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

View Product Details

Got Questions?

If you’d like to learn more about us and our products, contact us!

Contact info

LYS-SZ

+86 182 1872 0821

You might like