SRC60R068B Super Junction MOSFET 600V 48A TO-247
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SRC60R068B 600V Super Junction N-Channel Power MOSFET
The SRC60R068B is a high-voltage N-channel Super Junction MOSFET designed for demanding power applications requiring high efficiency, low losses, and superior power density. With a breakdown voltage of 600V and an ultra-low RDS(ON) of 68mΩ @ VGS = 10V, this device is optimized for telecom power systems, EV chargers, and industrial power conversion.
High-Efficiency Super Junction MOSFET for Industrial Power Systems
Fabricated using advanced super junction technology, the SRC60R068B offers low gate charge, fast switching characteristics, and a rugged avalanche rating for reliable operation in harsh electrical environments. Its TO-247 package ensures effective thermal handling for continuous operation under heavy loads.
Technical Specifications
| Feature | Specification |
|---|---|
| Breakdown Voltage (VDS) | 600V |
| On-Resistance (RDS(ON)) | 68mΩ @ VGS=10V |
| Continuous Drain Current (ID) | 48A |
| Gate Charge (Qg) | 182nC (typical) |
| Package Type | TO-247 |
| Technology | Super Junction MOSFET |
| Key Characteristics | Low Qg / Fast Switching / Rugged Avalanche Rating |
Key Features
- Super Junction technology for superior efficiency
- Ultra-low RDS(ON) = 68mΩ @ VGS=10V
- Low gate charge (Qg=182nC typ.)
- Fast switching capability
- Enhanced avalanche ruggedness and EMI performance
- TO-247 package for high thermal performance
Typical Applications
- Telecom power systems
- Electric vehicle (EV) charging equipment
- High-power industrial converters
- High-performance power modules
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