SRC60R230B High Voltage Power MOSFET Superior Power Density and Efficiency
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Enhance Power Density and Efficiency with SRC60R230B High Voltage MOSFET
The SRC60R230B is a high voltage power N-Channel MOSFET that incorporates advanced super junction technology, enabling superior power density and efficiency. With its low on-resistance, low gate charge, and fast switching times, this MOSFET is the ideal choice for applications that demand high-performance power control.
Super Junction Technology for Advanced Power Control and Performance
One of the key features of the SRC60R230B is its intrinsic fast recovery body diode, which enhances performance and efficiency in applications requiring rapid switching. This MOSFET is capable of fast switching, allowing for efficient power delivery and response times.
SRC60R230B MOSFET Technical features:
| Technical Feature | Description |
| Transistor Type | N-Channel MOSFET |
| Maximum Power Consumption (Pd) | 86.8 W |
| Maximum Junction Temperature (Tj) | 150 °C |
| Total Gate Charge (Qg) | 25.6 nC |
| Rise Time (tr) | 20 nS |
| Drain-Source Capacitance (Cd) | 86.4 pF |
| Maximum Drain-Source On-Resistance | (Rds) |
| (Rds) | 0.23 ohms |
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