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SRC60R230B High Voltage Power MOSFET Superior Power Density and Efficiency

$0.65 USD
$0.65 USD
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About the Product

Enhance Power Density and Efficiency with SRC60R230B High Voltage MOSFET

 

The SRC60R230B is a high voltage power N-Channel MOSFET that incorporates advanced super junction technology, enabling superior power density and efficiency. With its low on-resistance, low gate charge, and fast switching times, this MOSFET is the ideal choice for applications that demand high-performance power control.

Designed for reliability and efficiency, the SRC60R230B MOSFET offers an ultra-low on-resistance of 230mΩ at VGS = 10V, minimizing power losses and maximizing power conversion efficiency. Its low gate charge of 25.6nC ensures efficient gate control, enabling fast and precise switching.

Super Junction Technology for Advanced Power Control and Performance

One of the key features of the SRC60R230B is its intrinsic fast recovery body diode, which enhances performance and efficiency in applications requiring rapid switching. This MOSFET is capable of fast switching, allowing for efficient power delivery and response times.

The rugged design of the SRC60R230B ensures better EAS (Avalanche Energy Specified) performance, providing robustness and reliability in demanding environments. It can withstand high voltage and temperature conditions, making it suitable for a wide range of applications.

The SRC60R230B finds applications in various industries, including AC/DC power supplies, computer batteries, server/telecom equipment, and solar inverters. Its high voltage rating of 600V and maximum drain current of 13.7A make it suitable for handling power requirements in these demanding applications.

Upgrade your power control systems with the SRC60R230B high voltage power MOSFET, and experience superior power density, efficiency, and reliable performance. This MOSFET's advanced super junction technology ensures optimized power delivery and enhanced system performance.

 

Technical features:

Technical Feature Description
Transistor Type N-Channel MOSFET
Maximum Power Consumption (Pd) 86.8 W
Maximum Junction Temperature (Tj) 150 °C
Total Gate Charge (Qg) 25.6 nC
Rise Time (tr) 20 nS
Drain-Source Capacitance (Cd) 86.4 pF
Maximum Drain-Source On-Resistance (Rds)
(Rds) 0.23 ohms

 

The SRC60R230B high voltage power MOSFET is suitable for a wide range of applications, including:

  1. AC/DC power supplies: Enhance power conversion efficiency and reliability in various power supply systems, ensuring stable and efficient power delivery.

  2. Computer batteries: Optimize power control and management in computer battery systems, maximizing battery performance and lifespan.

  3. Server/Telecom: Improve power management and efficiency in server and telecom equipment, ensuring reliable and stable operation.

  4. Solar inverters: Enable efficient power conversion in solar inverters, enhancing the performance and reliability of solar energy systems.

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