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  • SRC60R230B is a high voltage power N-Channel MOSFET that incorporates advanced super junction technology.
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SRC60R230B High Voltage Power MOSFET Superior Power Density and Efficiency

$0.65 USD
$0.65 USD
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About the Product

Enhance Power Density and Efficiency with SRC60R230B High Voltage MOSFET

The SRC60R230B is a high voltage power N-Channel MOSFET that incorporates advanced super junction technology, enabling superior power density and efficiency. With its low on-resistance, low gate charge, and fast switching times, this MOSFET is the ideal choice for applications that demand high-performance power control.

Super Junction Technology for Advanced Power Control and Performance

One of the key features of the SRC60R230B is its intrinsic fast recovery body diode, which enhances performance and efficiency in applications requiring rapid switching. This MOSFET is capable of fast switching, allowing for efficient power delivery and response times.

 

SRC60R230B MOSFET Technical features:

Technical Feature Description
Transistor Type N-Channel MOSFET
Maximum Power Consumption (Pd) 86.8 W
Maximum Junction Temperature (Tj) 150 °C
Total Gate Charge (Qg) 25.6 nC
Rise Time (tr) 20 nS
Drain-Source Capacitance (Cd) 86.4 pF
Maximum Drain-Source On-Resistance (Rds)
(Rds) 0.23 ohms

 

International Customers Please Note:

This product ships from China. Please be aware that your order may be subject to import taxes, customs duties, and fees levied by the destination country once the shipment arrives. These charges are the customer's responsibility and are not included in the product price or shipping cost. We are unable to predict what these fees may be, as they vary by country.

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