High-Voltage Power MOSFET with Advanced Super-Junction Technology

SRC65R032FB - Ideal for High-Power and High-Performance Applications

The SRC65R032FB is a cutting-edge high-voltage power MOSFET featuring advanced super-junction technology and a breakdown voltage of 650V. With an ultra-low on-resistance of just 32mΩ at VGS = 10V, this device delivers exceptional power density and efficiency, making it ideal for high-power and high-performance applications.

Additionally, the SRC65R032FB boasts low gate charge and fast switching times, ensuring optimal performance for demanding applications. Its robust design, combined with high-strength avalanche characteristics and low qrr, make it a reliable choice for even the most challenging environments.

Key Features:

• Ultra-Low RDS(ON) = 32mΩ @ VGS = 10V
• Ultra-Low Gate Charge, Qg=124.1nC typ
• Fast Switching Capability
• Robust Design with Better EAS Performance
• Low qrr
• Non-Automotive

Qualified Applications:

• Electric Vehicle (EV) Charger
• High-Power Applications
• High-Performance Applications