Experience High Power Density and Efficient Power Management with the SRT045N012H Power MOSFET
The SRT045N012H Low-Voltage Power MOSFET in a PDFN5*6 package is a top-of-the-line component designed to meet the demands of applications requiring excellent power density and synchronous rectification. With its low on-resistance, low gate charge, and fast switching times, the SRT045N012H delivers outstanding performance and efficiency.
Robust Design and Fast Switching for Diverse Applications
The SRT045N012H is built with a robust design, offering enhanced EAS performance and robustness. It exhibits highly robust avalanche characteristics with a breakdown voltage of 45V, ensuring stable operation even under demanding conditions. Additionally, it improves electromagnetic interference (EMI) performance, contributing to cleaner and more reliable operation in sensitive electronic systems.
SRT045N012H Technical Features:
Feature
Description
Ultra-low RDS(ON)
Ultra-low on-resistance for minimal power loss
Ultra-low Gate Charge
Low gate charge for fast and responsive switching
Fast Switching
Capable of fast switching for optimized power management
Robust Design
Robust design for enhanced EAS performance and robustness
EMI Improvement
Improves electromagnetic interference (EMI) performance for cleaner operation
SRT045N012H Applications:
Server/Telecom
DC/DC converters
High-power supplies
Battery management systems
📦 Shipping & Customs⌄
🇺🇸🇪🇺 USA & European Union (DDP): Orders are delivered DDP. All customs duties, import taxes, and fees are included — no additional charges on delivery.
🌍 Rest of world: Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes.
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