Efficient Power Conversion with SSW47N60S 600V N-Channel MOSFET

Introducing the SSW47N60S, a high-performance 600V N-channel MOSFET that belongs to a new generation of advanced high-voltage MOSFET series. This MOSFET utilizes an innovative charge balancing mechanism to deliver exceptional low on-resistance and low gate charge performance, resulting in minimized conduction losses and excellent switching characteristics. It is designed to withstand extreme dv/dt rates and higher avalanche energies, making it ideal for a wide range of AC/DC power conversion applications in switch mode operations.

Low On-Resistance and Excellent Switching Performance: SSW47N60S MOSFET

The SSW47N60S MOSFET offers a maximum power consumption (Pd) of 391W, providing high power handling capabilities. It has a maximum drain-source voltage (|Vds|) of 600V, ensuring robustness in high-voltage applications. The maximum gate-source voltage (|Vgs|) is 30V, and the maximum gate threshold voltage (|Vgs(th)|) is 4.5V, enabling precise control and operation.

With a maximum drain current (|Id|) of 47A and a total gate charge (Qg) of 64nC, the SSW47N60S delivers efficient and reliable performance. It features a rise time (tr) of 12ns, facilitating fast switching operations. The drain-source capacitance (Cd) is 910pF, and the maximum drain-source on-resistance (Rds) is 0.07 ohms, contributing to low losses and improved efficiency.

The SSW47N60S is packaged in a TO247 package, which provides excellent thermal dissipation and mechanical robustness.

Technical Features: