TK62N60W K62N60W N-Channel MOSFET 600V Through Hole TO-247 Bitmain APW3 APW8 Power Supply Unit replacement

Name: TK62N60W K62N60W N-Channel MOSFET 600V Through Hole TO-247 Bitmain APW3 APW8 Power Supply Unit replacement
Brand: LYS Shenzhen
Price: 3.3 USD
Availability: InStock

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About the Product

High-Voltage Replacement MOSFET for Bitmain PSUs - Original Toshiba K62N60W

The Original Toshiba K62N60W MOSFET is the ideal high-voltage replacement for Bitmain power supply units (PSUs). This N-Channel field effect transistor offers a maximum drain to source voltage (Vdss) of 600V and continuous drain current (Id) of 61.8A, making it suitable for repairing ASIC miner control boards.

Reliable Replacement MOSFET for Bitmain PSUs - Original Toshiba K62N60W, TO-247 Package

Crafted with high-quality MOSFET technology, the K62N60W provides efficient performance and reliability. Its low drain-source resistance (Rds On) of 40mOhm at 30.9A and 10V gate-source voltage (Vgs) allows for effective power management.

K62N60W N-Channel MOSFET Features:

Category	Discrete Semiconductor Products
Category	Transistors - FETs, MOSFETs - Single
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	61.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40mOhm @ 30.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6500 pF @ 300 V
FET Feature	Super Junction
Power Dissipation (Max)	400W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
Base Product Number	TK62N60

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TK62N60W K62N60W N-Channel MOSFET 600V Through Hole TO-247 Bitmain APW3 APW8 Power Supply Unit replacement

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