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  • Original Toshiba K62N60W MOSFET for Bitmain PSU
  • TK62N60W K62N60W N-Channel MOSFET 600V Through Hole TO-247 Bitmain APW3 APW8
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TK62N60W K62N60W N-Channel MOSFET 600V Through Hole TO-247 Bitmain APW3 APW8 Power Supply Unit replacement

$3.30 USD
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About the Product

High-Voltage Replacement MOSFET for Bitmain PSUs - Original Toshiba K62N60W

The Original Toshiba K62N60W MOSFET is the ideal high-voltage replacement for Bitmain power supply units (PSUs). This N-Channel field effect transistor offers a maximum drain to source voltage (Vdss) of 600V and continuous drain current (Id) of 61.8A, making it suitable for repairing ASIC miner control boards.

Reliable Replacement MOSFET for Bitmain PSUs - Original Toshiba K62N60W, TO-247 Package

Crafted with high-quality MOSFET technology, the K62N60W provides efficient performance and reliability. Its low drain-source resistance (Rds On) of 40mOhm at 30.9A and 10V gate-source voltage (Vgs) allows for effective power management.


K62N60W N-Channel MOSFET Features:

Category

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - Single

Package

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

61.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 30.9A, 10V

Vgs(th) (Max) @ Id

3.7V @ 3.1mA

Gate Charge (Qg) (Max) @ Vgs

180 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6500 pF @ 300 V

FET Feature

Super Junction

Power Dissipation (Max)

400W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

Base Product Number

TK62N60
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International (outside the US):
Orders ship from China. Depending on your country, local customs authorities may apply import duties or taxes. Any such fees are set by your local authorities and are not included in the product price.

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