TK62N60W K62N60W N-Channel MOSFET for Bitmain APW3 APW8 PSU
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High-Voltage Replacement MOSFET for Bitmain PSUs - Original Toshiba K62N60W
The Original Toshiba K62N60W MOSFET is the ideal high-voltage replacement for Bitmain power supply units (PSUs). This N-Channel field effect transistor offers a maximum drain to source voltage (Vdss) of 600V and continuous drain current (Id) of 61.8A, making it suitable for repairing ASIC miner control boards.
Reliable Replacement MOSFET for Bitmain PSUs - Original Toshiba K62N60W, TO-247 Package
Crafted with high-quality MOSFET technology, the K62N60W provides efficient performance and reliability. Its low drain-source resistance (Rds On) of 40mOhm at 30.9A and 10V gate-source voltage (Vgs) allows for effective power management.
K62N60W N-Channel MOSFET Features:
|
Category |
Discrete Semiconductor Products |
|
Transistors - FETs, MOSFETs - Single |
|
|
Package |
Tube |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
600 V |
|
Current - Continuous Drain (Id) @ 25°C |
61.8A (Ta) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
40mOhm @ 30.9A, 10V |
|
Vgs(th) (Max) @ Id |
3.7V @ 3.1mA |
|
Gate Charge (Qg) (Max) @ Vgs |
180 nC @ 10 V |
|
Vgs (Max) |
±30V |
|
Input Capacitance (Ciss) (Max) @ Vds |
6500 pF @ 300 V |
|
FET Feature |
Super Junction |
|
Power Dissipation (Max) |
400W (Tc) |
|
Operating Temperature |
150°C (TJ) |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-247 |
|
Package / Case |
TO-247-3 |
|
Base Product Number |
TK62N60 |
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