Product Category

Power MOSFET

Material

Si

Process Technology

U-MOS VIII-H

Configuration

Single Quad Drain Triple Source

Channel Mode

Enhancement

Channel Type

N

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.3

Maximum Continuous Drain Current (A)

220

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (mOhm)

0.9 at 10V

Typical Gate Charge at Vgs (nC)

74 at 10V|32 at 4.5V

Typical Gate Charge at 10V (nC)

74

Typical Input Capacitance at Vds (pF)

5300 at 15V

Maximum Power Dissipation (mW)

78000

Typical Fall Time (ns)

15

Typical Rise Time (ns)

9.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Packaging

Tape and Reel

Automotive

No

Standard Package Name

SOP

Pin Count

8

Supplier Package

SOP Advance

Military

No

Mounting

Surface Mount

Package dimensions

0.95 x 5 x 5 mm

PCB changed

8

Lead Shape

No Lead