HYG009N04LS1C2 40V 200A N-Channel MOSFET for Hashboard Repair
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HYG009N04LS1C2 N-Channel MOSFET 40V 200A – Ultra-Low Rds(on) for Hashboard Repair
The HYG009N04LS1C2 (marking G009N04) is an N-channel MOSFET rated at 40V / 200A in a PDFN5×6-8L package, delivering an ultra-low 0.75mΩ Rds(on) at 10V gate drive (1.05mΩ at 4.5V). Every unit is 100% avalanche tested for ruggedness under transient overvoltage events. Used as a high-current power switching device on ASIC miner hashboards where the 200A rating provides ample margin for the heavy current loads in each chip group's power distribution path.
Why Ultra-Low Rds(on) Matters
At the currents flowing through hashboard power MOSFETs, every fraction of a milliohm translates directly to watts of heat. The HYG009N04's 0.75mΩ on-resistance keeps conduction losses and thermal dissipation to a minimum, maintaining stable voltage at the ASIC chips and preventing the thermal runaway loop that degrades higher-resistance MOSFETs over time.
Replacement Procedure
Remove the hashboard and locate the failed device in the power distribution path — the PDFN5×6 package is marked G009N04. Verify failure with a multimeter. Desolder with hot air at 320–350°C, clean all pads with solder wick, place the new device with pin 1 aligned and reflow. Confirm proper drain-source resistance and reinstall. Verify full chip detection in the dashboard.
HYG009N04LS1C2 MOSFET Specifications
| Parameter | Value |
|---|---|
| Part Number | HYG009N04LS1C2 |
| Marking | G009N04 |
| Drain-Source Voltage | 40V |
| Drain Current | 200A |
| Rds(on) @ 10V | 0.75mΩ typical |
| Rds(on) @ 4.5V | 1.05mΩ typical |
| Avalanche Tested | 100% |
| Package | PDFN5×6-8L |
| Condition | New (original) |
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